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MTDNK2N6

CYStech
Part Number MTDNK2N6
Manufacturer CYStech
Description Dual N-Channel Enhancement Mode Power MOSFET
Published Apr 28, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C446N6 Issued Date : 2009.06.15 Revised Date : 2013.09.06 Page No. : 1/7 Dual N-...
Datasheet PDF File MTDNK2N6 PDF File

MTDNK2N6
MTDNK2N6

Overview
CYStech Electronics Corp.
Spec.
No.
: C446N6 Issued Date : 2009.
06.
15 Revised Date : 2013.
09.
06 Page No.
: 1/7 Dual N-CHANNEL ENHANCEMENT MODE MOSFET MTDNK2N6 BVDSS ID RDSON(MAX) 60V 0.
51A 1.
6Ω Description The MTDNK2N6 is a dual N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features • Simple drive requirement • Low on-resistance • Small package outline • Pb-free package Equivalent Circuit MTDNK2N6 * with gate protection diode The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C (Note 1) Pulsed Drain Current (Note 2, 3) Total Power Dissipation @ TA=25 °C Linear Derating Factor Operating Junction Temperature and Storage Temperature Range Thermal Resistance, Junction-to-Ambient (Note 1) VDS VGS ID IDM Pd Tj, Tstg Rth,ja 60 ±20 0.
51 1.
5 0.
96 0.
016 -55~+150 130 Note : 1.
Surface mounted on 0.
125 in² copper pad of FR-4 board.
180℃/W when mounted on minimum copper pad.
2.
Pulse width limited by maximum junction temperature.
3.
Pulse Width ≤300μs, Duty Cycle≤2% Unit V V A A W W / °C °C °C/W MTDNK2N6 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C446N6 Issued Date : 2009.
06.
15 Revised Date : 2013.
09.
06 Page No.
: 2/7 Electrical Characteristics (Ta=25°C, unless otherwise noted) Symbol Min.
Typ.
Max.
Unit Test Conditions BVDSS VGS(th) IGSS IDSS IDSS *RDS(ON) *GFS Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd 60 1 1.
6 ---- 1.
4 - 1.
1 200 - - 62.
7 - 17.
6 -9 -8 -7 - 13 -6 - 1.
1 - 0.
2 - 0.
4 2.
5 ±5 1 10 2 1.
6 - 20 20 20 20 - V VGS=0V, ID=250μA V VDS=VGS, ID=250μA μA VGS=±20V, VDS=0V μA VDS=60V, VGS=0V μA VDS=48V, VGS=0V, Tj=125℃ Ω ID=100mA, VGS=5V ID=500mA, VGS=10V mS V...


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