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BAP64-04WS

SeCoS
Part Number BAP64-04WS
Manufacturer SeCoS
Description Small Signal General Purpose PiN Diode
Published Apr 28, 2016
Detailed Description Elektronische Bauelemente BAP64-04WS / BAP64-05WS / BAP64-06WS Small Signal General Purpose PiN Diode RoHS Compliant P...
Datasheet PDF File BAP64-04WS PDF File

BAP64-04WS
BAP64-04WS

Overview
Elektronische Bauelemente BAP64-04WS / BAP64-05WS / BAP64-06WS Small Signal General Purpose PiN Diode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low diode capacitance Low series inductance High voltage, current controlled RF resistor for RF attenuators and switches RF attenuators and switches MARKING CODE Part Name BAP64-04WS BAP64-05WS BAP64-06WS Marking 4W 5W 6W Circuit  PACKAGE INFORMATION  Package MPQ SOT-323 3K  Leader Size 7 inch SOT-323 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF.
A B C D E F Millimeter Min.
Max.
1.
80 2.
20 1.
80 2.
45 1.
15 1.
35 0.
80 1.
10 1.
20 1.
40 0.
20 0.
40 REF.
G H J K L Millimeter Min.
Max.
0.
100 REF.
0.
525 REF.
0.
08 0.
25 -0.
650 TYP.
MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) Parameter Continuous Reverse Voltage Continuous Forward Current Power Dissipation Thermal Resistance Junction to Ambient Junction, Storage Temperature Symbol VR IF PD RθJA TJ, TSTG Ratings 175 100 200 625 150, -55 ~ +150 Unit V mA mW °C / W °C ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) Parameters Symbol Min.
Typ.
Max.
Forward Voltage Reverse Voltage Leakage Current Diode Capacitance Diode Forward Resistance1 VF - - 1.
1 - - 10 IR - - 1 - 0.
52 - CD - - 0.
5 - - 0.
35 - - 40 - - 20 rD - - 3.
8 - - 1.
35 Charge Carrier Life Time tL Series Inductance BAP64-04WS BAP64-06WS BAP64-05WS LS Note: 1.
Guaranteed on AQL basis: inspection level S4,AQL 1.
0.
http://www.
SeCoSGmbH.
com/ 23-Jan-2014 Rev.
A - - 1.
55 1.
6 1.
4 - - Unit V µA pF Ω µS Test Conditions IF =50mA VR =175V VR =20V VR =0, f =1MHz VR =1 V, f =1MHz VR =20 V, f =1MHz IF = 0.
5 mA, f =100MHz IF =1mA, f =100MHz IF =10mA, f =100MHz IF =100mA, f =100MHz When switched from IF =10mA to IR =6mA; RL =100 Ω; measured at IR =3mA nH IF=10mA, f=100MHz Any changes of specification will not be informed individually.
Page 1 of 2 Elektronische Bauelemente RATINGS AND CHARACTERISTIC CURVES BAP64-04WS / BAP64-05W...


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