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RCR1525SI

RCR
Part Number RCR1525SI
Manufacturer RCR
Description P-Channel Enhancement Mode Field Effect Transistor
Published May 1, 2016
Detailed Description RCR1525SI P-Channel Enhancement Mode Field Effect Transistor z Features VDS (V) = -30 V ID = -3.5 A RDS(ON) = 75mΩ @VG...
Datasheet PDF File RCR1525SI PDF File

RCR1525SI
RCR1525SI

Overview
RCR1525SI P-Channel Enhancement Mode Field Effect Transistor z Features VDS (V) = -30 V ID = -3.
5 A RDS(ON) = 75mΩ @VGS = -10V RDS(ON) = 90mΩ @VGS = -4.
5V High density cell design for low RDS(ON).
z General Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.
This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
z Pin Configuration z Package Information D 3 12 GS z Absolute Maximum Ratings @TA = 25℃ unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed(1) Power Dissipation Operating and Storage Temperature Range Symbol VDSS VGSS ID PD TJ,TSTG Ratings -30 ±20 -3.
5 -16 1 -55 to 150 Unit V V A W ℃ YKKJPD-V3.
1 1/4 RCR1525SI z Electrical Characteristics @TA = 25°C unless otherwise noted Parameter Symbol Test Conditions Min Typ OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 µA -30 -- Zero Gate Voltage Drain Current IDSS VDS = -30 V, VGS = 0 V -- -- Gate - Body Leakage, Forward IGSSF VGS = +20 V, VDS = 0 V -- -- Gate - Body Leakage, Reverse IGSSR VGS = -20 V, VDS = 0 V ON CHARACTERISTICS (2) -- -- Gate Threshold Voltage VGS (th) VDS = VGS, ID = -250 µA -1 -1.
4 Static Drain-Source On-Resistance RDS(ON) VGS = -4.
5 V, ID = -3 A VGS = -10 V, ID = -4.
1 A -- 90 -- 75 Forward Transconductance gFS VDS = -5 V, ID = -2.
8 A DYNAMIC CHARACTERISTICS (3) 46 Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = -6 V, VGS = 0 V, f = 1.
0 MHz SWITCHING CHARACTERISTICS (3) -- 680 -- 72 -- 58 Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time td(on) tr td(off) tf VDD = -6 V, RL = 6Ω,ID = -1.
0 A, VGEN ...


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