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S-LP2305DSLT1G

Part Number	S-LP2305DSLT1G
Manufacturer	LRC
Description	P-Channel MOSFET
Published	May 1, 2016
Detailed Description	LESHAN RADIO COMPANY, LTD. 8V P-Channel Enhancement-Mode MOSFET VDS= -8V RDS(ON), Vgs@-4.5V, Ids@"3.5A = 68 mΩ RDS(ON),...
Datasheet	S-LP2305DSLT1G PDF File

Overview

LESHAN RADIO COMPANY, LTD.
8V P-Channel Enhancement-Mode MOSFET VDS= -8V RDS(ON), Vgs@-4.
5V, Ids@"3.
5A = 68 mΩ RDS(ON), Vgs@-2.
5V, Ids@"3A = 81 mΩ RDS(ON), Vgs@-1.
8V, Ids@"2A = 118 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements .
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device LP2305DSLT1G S-LP2305DSLT1G 3 1 2 SOT– 23 (TO–236A...

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S-LP2305DSLT1G P-Channel MOSFET - LRC

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