DatasheetsPDF.com

S-LP3401LT1G

LRC
Part Number S-LP3401LT1G
Manufacturer LRC
Description P-Channel MOSFET
Published May 1, 2016
Detailed Description LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET LP3401LT1G S-LP3401LT1G VDS (V) = -30V RDS(ON) < 70m...
Datasheet PDF File S-LP3401LT1G PDF File

S-LP3401LT1G
S-LP3401LT1G

Overview
LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET LP3401LT1G S-LP3401LT1G VDS (V) = -30V RDS(ON) < 70mΩ (VGS = -10V) RDS(ON) < 80mΩ (VGS = -4.
5V) RDS(ON) < 120mΩ (VGS = -2.
5V) FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION Device LP3401LT1G S-LP3401LT1G LP3401LT3G S-LP3401LT3G Marking A1 A1 Shipping 3000/Tape&Reel 10000/Tape&Reel 3 1 2 SOT– 23 (TO–236AB) 3D G 1 S 2 MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ, TSTG Maximum -30 ±12 -4.
2 -3.
5 -30 1.
4 1 -55 to 150 Units V V A W °C THERMAL CHARACTERISTICS (TA = 25oC unless otherwise noted) Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 65 85 43 Max 90 125 60 Units °C/W °C/W °C/W A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design.
The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C.
The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
Rev .
O 1/5 LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current ID=-250µA,...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)