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FS10ASJ-06F

Renesas
Part Number FS10ASJ-06F
Manufacturer Renesas
Description N-channel Power MOS FET
Published May 1, 2016
Detailed Description FS10ASJ-06F High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 7...
Datasheet PDF File FS10ASJ-06F PDF File

FS10ASJ-06F
FS10ASJ-06F

Overview
FS10ASJ-06F High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 70 mΩ • ID : 10 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.
) : 30 ns Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 2, 4 4 12 3 1 3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings 60 ±20 10 40 10 10 40 20 – 55 to +150 – 55 to +150 0.
32 REJ03G0241-0200 Rev.
2.
00 Dec 19, 2008 1.
Gate 2.
Drain 3.
Source 4.
Drain Unit V V A A A A A W °C °C g (Tc = 25°C) Conditions VGS = 0 V VDS = 0 V L = 50 µH Typical value REJ03G0241-0200 Rev.
2.
00 Dec 19, 2008 Page 1 of 6 FS10ASJ-06F Electrical Characteristics Par...


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