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MM60FU030PC

Thinki Semiconductor
Part Number MM60FU030PC
Manufacturer Thinki Semiconductor
Description Common Cathode Fast Recovery Epitaxial Diode
Published May 3, 2016
Detailed Description MM60FU030PC ® MM60FU030PC Pb Pb Free Plating Product 60.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Di...
Datasheet PDF File MM60FU030PC PDF File

MM60FU030PC
MM60FU030PC

Overview
MM60FU030PC ® MM60FU030PC Pb Pb Free Plating Product 60.
0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode APPLICATION · Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic Cleaner and Welder · Converter & Chopper · UPS TO-3PB/TO-3PN Cathode(Bottom Side Metal Heatsink) PRODUCT FEATURE · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current Internal Configuration Base Backside — Anode Cathode Anode GENERAL DESCRIPTION MM60FU030PC using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit VR Maximum D.
C.
Reverse Voltage 300 V VRRM Maximum Repetitive Reverse Voltage 300 V IF(AV) Average Forward Current TC=110°C, Per Diode TC=110°C, Per Package 30 A 60 A IF(RMS) IFSM RMS Forward Current Non-Repetitive Surge Forward Current TC=110°C, Per Diode TJ=45°C, t=10ms, 50Hz, Sine 42 480 A A PD Power Dissipation 156 W TJ Junction Temperature -55to +150 °C TSTG Torque Storage Temperature Range Module-to-Sink Recommended（M3） -55 to +150 1.
1 °C N·m Rth(J-C) Thermal Resistance Junction-to-Case, Per Diode 0.
8 °C /W Weight 6g ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise specified Symbol Parameter IRM Reverse Leakage Current VF Forward Voltage Test Conditions VR=300V VR=300V, TJ=125°C IF=30A IF=30A, TJ=125°C Min.
Typ.
Max.
-- -- 10 -- -- 10 -- 1.
25 1.
8 -- 1.
12 -- Unit µA mA V V trr Reverse Recovery Time IF=1A, VR=30V, diF/dt=-200A/μs -- 22 -- ns trr Reverse Recovery Time VR=150V, IF=30A IRRM Max.
Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C -- 35 --- 2.
5 -- ns A trr Reverse Recovery Time VR=150V, IF=30A IRRM Max.
Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C -- 70 --- 6.
8 -- ns A Rev.
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