DatasheetsPDF.com

CQY36N

Vishay Telefunken
Part Number CQY36N
Manufacturer Vishay Telefunken
Description GaAs Infrared Emitting Diode in Miniature (T-3/4) Package
Published Mar 23, 2005
Detailed Description CQY36N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature (T–¾) Package Description CQY36N is a standard GaAs ...
Datasheet PDF File CQY36N PDF File

CQY36N
CQY36N


Overview
CQY36N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature (T–¾) Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package.
Its flat window provides a wide aperture making it ideal for use with external optics.
The diode is case compatible to the BPW16N phototransistor, allowing the user to assemble his own optical interrupters.
Features D D D D D Suitable for pulse operation Standard T–¾ flat miniature package Wide angle of half intensity ϕ = ± 55° Peak wavelength lp = 950 nm Good spectral matching to Si photodetectors 94 8638 Applications Radiation source in near infrared range Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Surge Forward Current Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFSM PV Tj Tstg Tsd RthJA Value 5 100 2 170 100 –25.
.
.
+100 245 450 Unit V mA A mW °C °C °C K/W tp x 100 ms t x3s Document Number 81001 Rev.
2, 20-May-99 www.
vishay.
de • FaxBack +1-408-970-5600 1 (5) CQY36N Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Junction Capacitance Radiant Intensity Radiant Power Temp.
Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Rise time Fall Time Test Conditions IF = 50 mA, tp 20 ms IR = 100 mA VR = 0 V, f = 1 MHz, E = 0 IF = 50 mA, tp 20 ms IF = 50 mA, tp 20 ms IF = 50 mA x x x Symbol VF V(BR) Cj Ie TKfe ϕ Min 5 0.
7 Typ 1.
3 50 1.
5 10 –0.
8 ±55 950 50 400 450 Max 1.
6 fe IF = 50 mA IF = 50 mA IF = 1.
5 A, tp/T = 0.
01, tp 10 ms IF = 1.
5 A, tp/T = 0.
01, tp 10 ms lp Dl tr tf x x Unit V V pF mW/sr mW %/K deg nm nm ns ns Typical Characteristics (Tamb = 25_C unless otherwise specified) 250 PV – Power Dissipation ( mW ) 200 IF – Forward Current ( mA ) 125 100 150 RthJA 100 75 RthJA 50 50 0 0 20 40 60 80 100 25 0 0 20 40 60 80 100 94 8029 e Tamb – Ambient Temp...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)