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GSM1024

Globaltech
Part Number GSM1024
Manufacturer Globaltech
Description N-channel MOSFET
Published May 4, 2016
Detailed Description 20V N-Channel Enhancement Mode MOSFET Product Description GSM1024, N-Channel enhancement mode MOSFET, uses Advanced Tre...
Datasheet PDF File GSM1024 PDF File

GSM1024
GSM1024


Overview
20V N-Channel Enhancement Mode MOSFET Product Description GSM1024, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Packages & Pin Assignments GSM1024X7F (SOT-563) Features  20V/0.
6A,RDS(ON)=360mΩ@VGS=4.
5V  20V/0.
5A,RDS(ON)=420mΩ@VGS=2.
5V  20V/0.
4A,RDS(ON)=560mΩ@VGS=1.
8V  Low Offset (Error) Voltage  Low-Voltage Operation  High-Speed Circuits  Low Battery Voltage Operation  SOT-563 package design Applications  Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories  Battery Operated Systems  Power Supply Converter Circuits  Load/Power Switching Smart Phones, Pagers GSM1024 1 Source1 4 2 Gate1 5 3 Drain2 6 Source2 Gate2 Drain1 Ordering Information GS P/N GSM1024 P F Package Code Pb Free Code www.
gs-power.
com 1 Marking Information Part Number GSM1024X7F Package SOT-563 Absolute Maximum Ratings (TA=25ºC unless otherwise noted) Symbol VDSS VGSS ID IDM IS PD TJ TSTG Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25ºC TA=70ºC Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature TA=25ºC TA=70ºC Storage Temperature Range Part Marking B Typical 20 ±12 0.
7 0.
4 1.
0 0.
3 0.
27 0.
16 -55/150 -55/150 Unit V V A A A W ºC ºC GSM1024 www.
gs-power.
com 2 Electrical Characteristics (TA=25ºC unless otherwise noted) Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Parameter Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current VGS=0V,ID=250uA VDS=VGS,ID=250uA VDS=0V,VGS=±12V VDS= 20V,VGS=0V VDS= 20V, VGS=0V,TJ=85ºC VDS≥5V,V...


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