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STPSC10TH13TI

STMicroelectronics
Part Number STPSC10TH13TI
Manufacturer STMicroelectronics
Description Dual 650V power Schottky silicon carbide diode
Published May 9, 2016
Detailed Description STPSC10TH13TI Dual 650 V power Schottky silicon carbide diode in series    ,QVXODWHG72$%  Features  No ...
Datasheet PDF File STPSC10TH13TI PDF File

STPSC10TH13TI
STPSC10TH13TI

Overview
STPSC10TH13TI Dual 650 V power Schottky silicon carbide diode in series    ,QVXODWHG72$%  Features  No or negligible reverse recovery  Switching behavior independent of temperature  Suited for specific bridge-less topologies  High forward surge capability  Insulated package: – Capacitance: 7 pF – Insulated voltage: 2500 V rms Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible.
The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions.
Its high forward surge capability ensures a good robustness during transient phases.
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Table 1.
Device summary (per diode) Symbol Value IF(AV) VRRM Tj (max.
) 10 A 650 V 175 °C January 2016 This is information on a product in full production.
DocID024699 Rev 3 1/8 www.
st.
com 8 Characteristics 1 Characteristics STPSC10TH13TI Table 2.
Absolute ratings (limiting values at 25 °C unless otherwise specified, per diode) Symbol Parameter Value Unit VRRM IF(RMS) IF(AV) IFSM IFRM Tstg Tj Repetitive peak reverse voltage Forward rms current Average forward current Tc = 70 °C(1), DC current Surge non repetitive forward current Repetitive peak forward current tp = 10 ms sinusoidal, Tc = 25 °C tp = 10 ms sinusoidal, Tc = 125 °C tp = 10 µs sinusoidal, Tc = 25 °C Tc = 70 °C(1),  = 0.
1 Storage temperature range Operating junction temperature (2) 1.
Value based on Rth(j-c) max (per diode) 2.
d----P-----t--o----t dTj  R-----t--h-----1--j---–----a---- condition to avoid thermal runaway for a diode on its own heatsink Table 3.
Thermal resistance ...


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