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STW56N60DM2

Part Number	STW56N60DM2
Manufacturer	STMicroelectronics
Description	N-CHANNEL MOSFET
Published	May 9, 2016
Detailed Description	STW56N60DM2 N-channel 600 V, 0.052 Ω typ., 50 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production dat...
Datasheet	STW56N60DM2 PDF File

Overview

STW56N60DM2 N-channel 600 V, 0.
052 Ω typ.
, 50 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram D(2) G(1) Features Order code VDS STW56N60DM2 600 V RDS(on) max.
0.
060 Ω ID 50 A PTOT 360 W • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.
It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
S(3) Order code STW56N60DM2 AM15572v1_no_tab Table 1: Device summary Marking 56N60DM2 Package TO-247 Packing Tube June 2015 DocID026982 Rev 3 This is information on a product in full production.
1/12 www.
st.
com Contents Contents STW56N60DM2 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves).
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6 3 Test circuits 8 4 Package information .
9 4.
1 TO-247 package information.
9 5 Revision history .
11 2/12 DocID026982 Rev 3 STW56N60DM2 Electrical ratings 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter Value Unit VGS ID IDM(1) PTOT dv/dt(2) dv/dt(3) Tstg Tj Gate-source voltage Drain current (continuous) at Tcase ...

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