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STW62NM60N

STMicroelectronics
Part Number STW62NM60N
Manufacturer STMicroelectronics
Description N-CHANNEL MOSFET
Published May 9, 2016
Detailed Description STW62NM60N Features N-channel 600 V, 0.04 Ω typ., 65 A, MDmesh™ II Power MOSFET in a TO-247 package Datasheet − produc...
Datasheet PDF File STW62NM60N PDF File

STW62NM60N
STW62NM60N

Overview
STW62NM60N Features N-channel 600 V, 0.
04 Ω typ.
, 65 A, MDmesh™ II Power MOSFET in a TO-247 package Datasheet − production data Order code STW62NM60N VDS 600 V RDS(on) max 0.
049 Ω ID 65 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high efficiency converters.
3 2 1 TO-247 Figure 1.
Internal schematic diagram $ ' Table 1.
Device summary Order code STW62NM60N Marking 62NM60N 3 !-V Package TO-247 Packaging Tube December 2012 This is information on a product in full production.
Doc ID 018945 Rev 3 1/13 www.
st.
com 13 Contents Contents STW62NM60N 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 Test circuits .
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8 4 Package mechanical data .
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9 5 Revision history .
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12 2/13 Doc ID 018945 Rev 3 STW62NM60N 1 Electrical ratings Electrical ratings Table 2.
Absolute maximum ratings Symbol Parameter Value VDS VGS ID ID IDM (1) PTOT IAS EAS dv/dt (2) Drain-source voltage Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C...


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