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STW72N60DM2AG

STMicroelectronics
Part Number STW72N60DM2AG
Manufacturer STMicroelectronics
Description N-CHANNEL MOSFET
Published May 9, 2016
Detailed Description STW72N60DM2AG Automotive N-channel 600 V, 0.037 Ω typ., 68 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - p...
Datasheet PDF File STW72N60DM2AG PDF File

STW72N60DM2AG
STW72N60DM2AG


Overview
STW72N60DM2AG Automotive N-channel 600 V, 0.
037 Ω typ.
, 68 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code STW72N60DM2AG VDS 600 V RDS(on) max.
0.
042 Ω ID 68 A PTOT 446 W  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.
It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Order code STW72N60DM2AG Table 1: Device summary Marking 72N60DM2 Package TO-247 Packing Tube December 2015 DocID027314 Rev 4 This is information on a product in full production.
1/12 www.
st.
com Contents Contents STW72N60DM2AG 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves).
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6 3 Test circuits 8 4 Package information .
9 4.
1 TO-247 package information.
9 5 Revision history .
11 2/12 DocID027314 Rev 4 STW72N60DM2AG Electrical ratings 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter Value Unit VGS ID IDM(1) PTOT dv/dt(2) dv/dt(3) Tstg Tj Gate-source voltage Drain current (continuous) at Tcase = 25 °...



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