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TN1605H-6FP

STMicroelectronics
Part Number TN1605H-6FP
Manufacturer STMicroelectronics
Description SCRs
Published May 9, 2016
Detailed Description TN1605H-6FP High temperature 16 A SCRs $ * . * $ . 72)3$% Features • High junction temperature: Tj = 150 °C • High...
Datasheet PDF File TN1605H-6FP PDF File

TN1605H-6FP
TN1605H-6FP

Overview
TN1605H-6FP High temperature 16 A SCRs $ * .
* $ .
72)3$% Features • High junction temperature: Tj = 150 °C • High noise immunity dV/dt = 200 V/µs up to 150 °C • Gate triggering current IGT = 6 mA • Blocking voltage VDRM/VRRM = 600 V • High turn on current rise dI/dt: 100 A/µs • ECOPACK®2 compliant component • Complies with UL standards (File ref: E81734) • Insulated package TO-220FPAB: – Insulated voltage: 2000 VRMS Datasheet − production data Applications • Voltage regulator circuits for motorbikes • Inrush current limiting circuits • Motor control circuits and starters • Light dimmers • Solid state relays Description Thanks to a junction temperature up to 150 °C and an insulated TO-220FPAB package, the TN1605H-6FP offers high thermal performance up to 16 A rms.
The trade-off between the device's noise immunity (dV/dt = 200 V/µs), its gate triggering current (IGT = 6 mA) and its turn-on current rise (dI/dt = 100 A/µs) allows the design of robust and compact control circuits for voltage regulators in motorbikes and industrial drives, overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances, and inrush current limiting circuits.
The insulated fullpack package allows a back-to-back configuration.
Table 1.
Device summary Order code Package VDRM/VRRM IGT TN1605H-6FP TO-220FPAB 600 V 6 mA February 2015 This is information on a product in full production.
DocID027546 Rev 1 1/9 www.
st.
com 9 Characteristics 1 Characteristics TN1605H-6FP Table 2.
Absolute ratings Symbol Parameter Value Unit IT(RMS) On-state rms current (180° conduction angle) IT(AV) Average on-state current (180° conduction angle) ITSM I²t dI/dt VDRM, VRRM IGM PG(AV) Tstg Tj TL Vins Non repetitive surge peak on-state current (Tj initial = 25 °C) I²t value for fusing (Tj initial = 25 °C) Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns, Tj = 25 °C Repetitive peak off-state voltage Peak gate current Average gate power dissipation...


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