TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS417
1SS417
High Speed Switching Application
Small package Low forward voltage: VF (3) = 0.56V (typ.) Low reverse current: IR = 5μA (Max.)
0.1
0.6±0.05
Unit: mm A
CATHODE MARK
1.0±0.05
0.8±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
0.2 ±0.05 0.07 M A
...
