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2N5222

ETC

NPN SILICON ANNULAR TRANSISTOR


Description
2N5222 (SILICON) NPN SILICON ANNULAR TRANSISTOR ... designed for RF amplifier, mixer, and video IF applications. High Current· Gain-Bandwidth Product fT = 450 MHz (Min) @ IC = 4.0 mAde Coliector·Emitter Saturation VoltageVCE = 1.0 Vdc (Max) @ IC = 4.0 mAde Low Collector· Base Capacitance Ccb= 1.3pF (Max)@VCB=10Vdc NPN SILICON AMPLIFIER TRANSISTOR *M...



ETC

2N5222

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