Insulated Gate Bipolar Transistor
Description
IGBTs
2PG401
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Allowing to provide with the surface mounting package
7.2±0.3 0.8±0.2
unit: mm
7.0±0.3 3.0±0.2
3.5±0.2
s Applications
q For flash-light for use in a camera
1.1±0.1
0.85±0.1 0.4±0.1
1.0±0.2
s Absolute ...
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