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2SA1934

Part Number	2SA1934
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Epitaxial Type Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1934 High-Current Switching Applications DC-DC Converter ...
Datasheet	2SA1934 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1934 High-Current Switching Applications DC-DC Converter Applications 2SA1934 Unit: mm • Low collector saturation voltage: VCE (sat) = −0.
4 V (max) (IC = −3 A) • High-speed switching: tstg = 1.
0 µs (typ.
) • Complementary to 2SC5176 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −100 −80 −7 −5 −8 −1 1.
8 150 −55 to 150 Unit V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-10T1A Weight: ...

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