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2SA1939

Part Number	2SA1939
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1939 Power Amplifier Applications 2SA1939 Unit: mm • Complement...
Datasheet	2SA1939 PDF File

Overview

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1939 Power Amplifier Applications 2SA1939 Unit: mm • Complementary to 2SC5196 • Recommend for 40-W high-fidelity audio frequency amplifier output stage.
Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) VCBO VCEO VEBO IC IB PC −80 −80 −5 −6 −0.
6 60 V V V A A W Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA ― ― Note: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA 2-16C1A temperature/curren...

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