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2SA1954

Part Number	2SA1954
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Epitaxial Type Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1954 General Purpose Amplifier Applications Switching and...
Datasheet	2SA1954 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1954 General Purpose Amplifier Applications Switching and Muting Switch Application 2SA1954 Unit: mm • Low saturation voltage: VCE (sat) (1) = −15 mV (typ.
) @IC = −10 mA/IB = −0.
5 mA • Large collector current: IC = −500 mA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage VCEO −12 V Emitter-base voltage VEBO −5 V Collector current IC −500 mA Base current IB −50 mA Collector power dissipation Junction temperature Storage temperature range PC 100 mW Tj 125 °C Tstg −55~125 °C JEDEC JEITA ― SC-70 Note: Using continuousl...

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