Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1760
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Typ)@ IC= 2A ·Complements the 2SB1184 ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power dissipation
ABSOLUTE MAXIMUM RATINGS(Ta=...
Inchange Semiconductor
2SD1760 PDF File
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