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2SD1760

GME
Part Number 2SD1760
Manufacturer GME
Description Power Transistor
Published May 17, 2018
Detailed Description Power Transistor FEATURES  Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)  Complements the 2SB1184. APPLICATIONS  ...
Datasheet PDF File 2SD1760 PDF File

2SD1760
2SD1760

Overview
Power Transistor FEATURES  Low VCE(sat).
VCE(sat)=0.
5V(Typ.
) (IC/IB=2A/0.
2A)  Complements the 2SB1184.
APPLICATIONS  Epitaxial planar type.
NPN silicon transistor.
Pb Lead-free Production specification 2SD1760 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5V IC Collector Current(DC) 3A ICP Collector Current(Pulse) 4.
5 A IB Base Current 1A PC Collector Power Dissipation 1.
5 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ W016 Rev.
A www.
gmesemi.
com 1 Production specification Power T...


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