TRANSISTOR. 2SD2340 Datasheet

2SD2340 Datasheet PDF


Part 2SD2340
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2340 www.datasheet.
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Datasheet
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2SD2340
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2340
DESCRIPTION
www.data·sWheietth4uT.cOom-3PN package
·DARLINGTON
·High DC current gain
APPLICATIONS
·Audio ,regulator and general purpose
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
130
110
5
6
50
2.5
150
-55~150
UNIT
V
V
V
A
W



2SD2340
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2340
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=5mA
VBEsat
Base-emitter saturation voltage
ICBO Collector cut-off current
ICEO Collector cut-off current
IEBO Emitter cut-off current
IC=5A ;IB=5mA
VCB=130V; IE=0
VCE=110V IB=0
VEB=5V; IC=0
hFE DC current gain
IC=3A ; VCE=5V
fT Transition frequency
IC=0.5A ; VCE=10V
MIN TYP. MAX UNIT
110 V
2.5 V
3.0 V
100 µA
100 µA
100 µA
5000
20 MHz
2






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