2SD856 Datasheet PDF
NPN Transistor
- 2SD856 | INCHANGE
- NPN Transistor
-
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB761 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Em.
- 2SD856 | ETC
- Si NPN Transistor
-
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.
- 2SD856 | INCHANGE
- NPN Transistor
- isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(.
- isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB761 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Em.
- 2SD856 | ETC
- Si NPN Transistor
- www.DataSheet4U.com
www.DataSheet4U.com
.
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- 2SD856A | ETC
- Si NPN Transistor
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www.DataSheet4U.com
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2020-09-21 : 2SD1729 2SC4075 2SC4105 2SD687 2SD675 2SD673 2SD613 2SD608 2SD612 2SD600K