TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ200
High Power Amplifier Application
High breakdown voltage
: VDSS = −180 V
z High forward transfer admittance : |Yfs| = 4.0 S (typ.)
z Complementary to 2SK1529
2SJ200
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Gate−source volt...
