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2SJ207

NEC
Part Number 2SJ207
Manufacturer NEC
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ207 P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SJ207, P-channel vertic...
Datasheet PDF File 2SJ207 PDF File

2SJ207
2SJ207

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ207 P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SJ207, P-channel vertical type MOS FET, is a switching device which can be driven by 2.
5 V power supply.
As the MOS FET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone stereos which need power saving.
FEATURES • Directly driven by ICs having a 3 V power supply.
• Not necessary to consider driving current because of its high input impedance.
• Possible to reduce the number of parts by omitting the bias resistor.
• Has low on-state resistance RDS(on) = 4.
0 Ω MAX.
VGS = －2.
5 V, ID = －30 mA RDS(on) = 1.
5 Ω MAX.
VGS = －4.
0 V, ID = －500 mA ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note 1 Total Power Dissipation Note 2 Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT ...


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