2SK3582TK
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3582TK
For ECM
Application for Ultra-compact ECM
0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.1±0.05
Unit: mm
0.45 0.45
1.4±0.05
Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range
Symbol VGDO IG PD...
