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2SK3582TV

Toshiba Semiconductor
Part Number 2SK3582TV
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jan 14, 2010
Detailed Description 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM • Application for Ultra-com...
Datasheet PDF File 2SK3582TV PDF File

2SK3582TV
2SK3582TV

Overview
2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM • Application for Ultra-compact ECM 0.
2±0.
05 1.
2±0.
05 0.
3±0.
05 3 0.
8±0.
05 Unit: mm 1.
2±0.
05 0.
8±0.
1 Absolute Maximum Ratings (Ta=25°C) Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA mW °C °C 0.
4 1 2 0.
4 0.
28±0.
02 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data ...


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