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2SK3669 MOSFET Datasheet PDF

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part Number 2SK3669
Description N-Channel MOSFET
Feature 2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII) 2SK3669 Switching Regulator, Audio Am plifier and Motor Drive Applications

• Low drain-source ON-resistanc e: RDS (ON) = 95 mΩ (typ.
) High forwa rd transfer admittance: |Yfs| = 6 S (ty p.
) Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) Unit: mm
• Enha ncement mode : Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA) www.
DataSheet4U.
com Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Dra in-gate voltage (RGS = 20 kΩ) Gate-sou rce voltage DC Drain current (Note 1) S ymbol VDSS VDGR VGSS ID IDP .
Manufacture Toshiba Semiconductor
Datasheet
Download 2SK3669 Datasheet

2SK3669

 

 

 


 

 

 

Part Number 2SK3669
Description N-Channel MOSFET
Feature 2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII) 2SK3669 Switching Regulator, Audio Am plifier and Motor Drive Applications

• Low drain-source ON-resistanc e: RDS (ON) = 95 mΩ (typ.
) High forwa rd transfer admittance: |Yfs| = 6 S (ty p.
) Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) Unit: mm
• Enha ncement mode : Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA) www.
DataSheet4U.
com Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Dra in-gate voltage (RGS = 20 kΩ) Gate-sou rce voltage DC Drain current (Note 1) S ymbol VDSS VDGR VGSS ID IDP .
Manufacture Toshiba Semiconductor
Datasheet
Download 2SK3669 Datasheet

2SK3669

 

 

 

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