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3DD13009

Part Number	3DD13009
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : V...
Datasheet	3DD13009 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.
) ·Collector Saturation Voltage : VCE(sat) = 1.
5 (Max) @ IC= 8.
0A ·Switching Time : tf= 0.
7μs(Max.
)@ IC= 8.
0A ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switch mode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 12 A ICM Collector Current-peak 24 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 6 A 130 W 150 ℃ Tstg Storage Tem...

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