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3DD13009

LGE
Part Number 3DD13009
Manufacturer LGE
Description NPN Transistor
Published Nov 29, 2014
Detailed Description 3DD13009(NPN) TO-220 Transistor 1. BASE TO-220 2. COLLECTOR Features 3 2 1 — power switching applications 3. EMIT...
Datasheet PDF File 3DD13009 PDF File

3DD13009
3DD13009

Overview
3DD13009(NPN) TO-220 Transistor 1.
BASE TO-220 2.
COLLECTOR Features 3 2 1 — power switching applications 3.
EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 700 400 9 12 2 150 -55-150 Units V V V A W ℃ ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Fall time Storage time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT tf ts Test conditions IC =1mA, IE=0 IC=10mA, IB=0 IE= 1mA, IC=0 VCB=700V,IE=0 VCE=400V,IB=0 VEB=9V, IC=0 VCE=5V, IC=3A IC=8A,IB=1.
6A IC=8A, IB=1.
6A VCE=10V,Ic=500mA, f =1MHz IC=8A, IB1=-IB2=1.
6A VCC=125V MIN TYP MAX UNIT 700 V 400 V 9V 100 µA 100 µA 100 µA 8 40 1.
5 V 1.
6 V 4 MHz 0.
9 µs 4 µs CLASSIFICATION OF hFE Rank Range 8-15 15-20 20-25 25-30 30-35 35-40 Typical Characteristics 3DD13009(NPN) TO-220 Transistor ...


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