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3N190

Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier

Description

Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N190 / 3N191 FEATURES CORPORATION Very High Input Impedance High Gate Breakdown 3N190-3N191 Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 1) 3N190, 3N191 . . . . . . . . . . . . . . . . . . . ...

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