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3N190

Part Number	3N190
Manufacturer	Linear Integrated Systems
Description	P-CHANNEL DUAL MOSFET ENHANCEMENT MODE
Published	Mar 30, 2005
Detailed Description	3N190 3N191 Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT LO...
Datasheet	3N190 PDF File

Overview

3N190 3N191 Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT LOW TRANSFER CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation One Side Continuous Power Dissipation Both Sides Maximum Current Drain to Source2 Maximum Voltages Drain to Gate2 Drain to Source Gate to Gate 2 1 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE IGSS ≤ ±10pA Crss ≤ 1.
0pF TO-78 BOTTOM VIEW C -65 to +150 °C -55 to +135 °C 300mW 525mW 50mA 30V 30V ±125V ±80V G1 S1 D1 2 4 3 5 6 1 7 G2 S2 D2 Transient Gate to Source2,3 MATCHI...

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