Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Description
AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or...
