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AO8816

Alpha & Omega Semiconductors
Part Number AO8816
Manufacturer Alpha & Omega Semiconductors
Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Published Aug 29, 2009
Detailed Description www.DataSheet4U.com AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The...
Datasheet PDF File AO8816 PDF File

AO8816
AO8816

Overview
www.
DataSheet4U.
com AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
Standard Product AO8816 is Pb-free (meets ROHS & Sony 259 specifications).
AO8816L is a Green Product ordering option.
AO8816 and AO8816L are electrically identical.
Features VDS (V) = 30V ID = 8 A (VGS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 17mΩ (VGS = 4.
5) RDS(ON) < 23mΩ (VGS = 2.
5V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 ±12 8 6 30 1.
5 1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 64 89 53 Max 83 120 70 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO8816 www.
DataSheet4U.
com Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.
5V, VDS=5V VGS=10V, ID=8A Static Drain-Source On-Resistance TJ=125°C VGS=4.
5V, ID=5A 0.
6 30 12.
2 17 13 17.
6 23 0.
73 15 21 17 23 1 2.
5 1 Min 30 1 5 ±100 1.
4 Typ Max Units V µA nΑ V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC gFS VSD IS VGS=2.
5V, ID=4A Forward Transconductance VDS=5V, ID=...


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