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AP60L02H

Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP60L02H/J N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive R...


Advanced Power Electronics

AP60L02H

File Download Download AP60L02H Datasheet


Description
Advanced Power Electronics Corp. AP60L02H/J N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requirement D ▼ Fast Switching G S Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60L02J) is available for low-profile applications. BVDSS RDS(ON) ID 25V 12mΩ 50A G D S TO-252(H) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient G D S Rating 25 ± 20 50 32 180 62.5 0.5 -55 to 15...




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