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B817

Sanyo

PNP Epitaxial Planar Silicon Transistors

Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD...



B817

Sanyo


Octopart Stock #: O-920741

Findchips Stock #: 920741-F

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Description
Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of on-chip ballast resistance. · Good depe
More View nedence of fT on current and excellent high frequency responce. Package Dimensions unit:mm 2022A [2SB817/2SD1047] The descriptions in parentheses are for the 2SB817 only : other descriptions than those in parentheses are common to the 2SB817 and 2SD1047. 1 : Base 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)1A VCE=(–)5V, IC=(–)6A VCE=(–)5V, IC=(–)1A VCB=(–)10V, f=1MHz * : The 2SB817/2SD1047 are classified by 1A hFE as follows : 60 D 120 100 E 200 SANYO : TO-3PB Ratings (–)160 (–)140 (–)6 (–)12 (–)15 100 150 –40 to +150 Unit V V V A A W ˚C ˚C Ratings min typ 60* 20 15 (300) 210 max (–)0.1 (–)0.1 200* Unit mA mA MHz pF pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91098HA (KT)/90595MO (KOTO)/4017KI/6284KI, MT 8-3416/7039 No.680–1/4 Parameter Base-to-Emitter Voltage Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Fall Time Storage Time Switching Time Test Circuit 2SB817/2SD1047 Symbol Conditions VBE VCE=(–)5V, IC=(–)1A VCE(sat






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