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BAS101 Diodes Datasheet PDF

High Voltage Switching Diodes

High Voltage Switching Diodes

 

 

 

Part Number BAS101
Description High Voltage Switching Diodes
Feature BAS101; BAS101S High-voltage switching d iodes Rev.
02 — 14 December 2009 Pro duct data sheet 1.
Product profile 1.
1 General description High-voltage swit ching diodes, encapsulated in a SOT23 s mall Surface-Mounted Device (SMD) plast ic package.
Table 1.
Product overview Type number Package NXP BAS101 SOT 23 BAS101S SOT23 JEITA - Configurat ion single dual series 1.
2 Features „ High switching speed: trr ≤ 50 ns „ Low leakage current „ Repetitive peak reverse voltage: VRRM ≤ 300 V 1.
3 Ap plications „ High-speed switching „ H igh-voltage switching „ Low capacitan ce: Cd ≤ 2 pF „ Reverse vo .
Manufacture NXP
Datasheet
Download BAS101 Datasheet

BAS101

 

 

 


 

 

 

Part Number BAS101S
Description High Voltage Switching Diodes
Feature BAS101; BAS101S High-voltage switching d iodes Rev.
02 — 14 December 2009 Pro duct data sheet 1.
Product profile 1.
1 General description High-voltage swit ching diodes, encapsulated in a SOT23 s mall Surface-Mounted Device (SMD) plast ic package.
Table 1.
Product overview Type number Package NXP BAS101 SOT 23 BAS101S SOT23 JEITA - Configurat ion single dual series 1.
2 Features „ High switching speed: trr ≤ 50 ns „ Low leakage current „ Repetitive peak reverse voltage: VRRM ≤ 300 V 1.
3 Ap plications „ High-speed switching „ H igh-voltage switching „ Low capacitan ce: Cd ≤ 2 pF „ Reverse vo .
Manufacture NXP
Datasheet
Download BAS101S Datasheet

BAS101S

 

 

 


 

 

 

Part Number BAS101
Description High Voltage Switching Diodes
Feature BAS101; BAS101S High-voltage switching d iodes Rev.
02 — 14 December 2009 Pro duct data sheet 1.
Product profile 1.
1 General description High-voltage swit ching diodes, encapsulated in a SOT23 s mall Surface-Mounted Device (SMD) plast ic package.
Table 1.
Product overview Type number Package NXP BAS101 SOT 23 BAS101S SOT23 JEITA - Configurat ion single dual series 1.
2 Features „ High switching speed: trr ≤ 50 ns „ Low leakage current „ Repetitive peak reverse voltage: VRRM ≤ 300 V 1.
3 Ap plications „ High-speed switching „ H igh-voltage switching „ Low capacitan ce: Cd ≤ 2 pF „ Reverse vo .
Manufacture NXP
Datasheet
Download BAS101 Datasheet

BAS101

 

 

 

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