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BF543

Siemens Semiconductor Group

Silicon N Channel MOS FET Triode


Description
Silicon N Channel MOS FET Triode Preliminary Data q q BF 543 For RF stages up to 300 MHz preferably in FM applications IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BF 543 Marking LDs Ordering Code (tape and reel) Q62702-F1372 Pin Configuration 1 2 3 G D S Package1) SOT-23 Maximum Ratings Param...



Siemens Semiconductor Group

BF543

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