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BF543

Infineon Technologies AG
Part Number BF543
Manufacturer Infineon Technologies AG
Description Silicon N-Channel MOSFET Triode
Published Mar 23, 2005
Detailed Description BF543 Silicon N-Channel MOSFET Triode  For high-frequency stages up to 300 MHz 3 preferably in FM applications IDSS...
Datasheet PDF File BF543 PDF File

BF543
BF543


Overview
BF543 Silicon N-Channel MOSFET Triode  For high-frequency stages up to 300 MHz 3 preferably in FM applications IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF543 Maximum Ratings Parameter Drain-source voltage Drain current Marking LDs 1=G Pin Configuration 2=D 3=S Package SOT23 Symbol VDS ID Value 20 30 10 200 -55 .
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150 -55 .
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150 150 Unit V mA mW °C Gate-source peak current Total power dissipation, TS  76 °C Storage temperature Ambient temperature range Channel temperature IGSM Ptot Tstg TA Tch Thermal Resistance Channel - soldering point1) Rthchs 370 K/W 1For calculation of R thJA please ref...



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