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BUTW92 Datasheet

HIGH CURRENT NPN SILICON TRANSISTOR

® BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR APPLICATIONS: s MOTOR CONTROL s HIGH FREQUENCY AND EFFICIENCY CONVERTERS DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency converters and motor controls. 3 2 1 TO-247 INTERNAL SCHEMATIC DI.


STMicroelectronics
BUTW92.pdf

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STMicroelectronics BUTW92 Datasheet

® BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR APPLICATIONS: s MOTOR CONTROL s HIGH FREQUENCY AND EFFICIENCY CONVERTERS DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency converters and motor controls. 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO VEBO IE IEM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Emitter-Current Emitter Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 5ms) Total Dissipation at Tc ≤ 25 oC Storage Temperature Max. Operating Junction Temperature September 2001 Value 500 250 7 60 70 15 18 180 -65 to 150 150 Unit V V V A A A A W oC oC 1/4 BUTW92 THERMAL DATA Rthj-case Thermal Resistance Junction-case MAX 0.7 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Con.






isc Silicon NPN Power Transistor DESCRIPTION ·High current ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBS Collector-Emitter Voltage (V.


Inchange Semiconductor
BUTW92.pdf

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Inchange Semiconductor BUTW92 Datasheet

isc Silicon NPN Power Transistor DESCRIPTION ·High current ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBS Collector-Emitter Voltage (VBE= 0) 500 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 60 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 70 A 180 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W BUTW92 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUTW92 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector.








 

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