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FCI25N60N
N-Channel SupreMOS MOSFET
Description
FCI25N60N — N-Channel SupreMOS®
MOSFET
FCI25N60N N-Channel SupreMOS®
MOSFET
600 V, 25 A, 125 mΩ November 2013 Features RDS(on) = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A Ultra Low Gate Charge (Typ. Qg = 57 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF) 100% Avalanche Tested RoHS Compliant Application Solar Inverter AC-DC Powe...
Fairchild Semiconductor
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