DatasheetsPDF.com

FDG312P

Fairchild Semiconductor
Part Number FDG312P
Manufacturer Fairchild Semiconductor
Description P-Channel 2.5V Specified PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDG312P February 1999 FDG312P P-Channel 2.5V Specified PowerTrench™ MOSFET General Description This P-Channel MOSFET i...
Datasheet PDF File FDG312P PDF File

FDG312P
FDG312P

Overview
FDG312P February 1999 FDG312P P-Channel 2.
5V Specified PowerTrench™ MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications.
Features • -1.
2 A, -20 V.
RDS(on) = 0.
18 Ω @ VGS = -4.
5 V RDS(on) = 0.
25 Ω @ VGS = -2.
5 V.
• • Low gate charge (3.
3 nC typical).
High performance trench technology for extremely low RDS(ON).
Compact industry standard SC70-6 surface mount package.
Applications • Load switch • Battery protection •...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)