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FDG312P

ON Semiconductor
Part Number FDG312P
Manufacturer ON Semiconductor
Description P-Channel MOSFET
Published Dec 24, 2023
Detailed Description FDG312P FDG312P P-Channel 2.5V Specified PowerTrench™ MOSFET General Description Features This P-Channel MOSFET is ...
Datasheet PDF File FDG312P PDF File

FDG312P
FDG312P

Overview
FDG312P FDG312P P-Channel 2.
5V Specified PowerTrench™ MOSFET General Description Features This P-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications.
Applications • Load switch • Battery protection • Power management • -1.
2 A, -20 V.
RDS(on) = 0.
18 Ω @ VGS = -4.
5 V RDS(on) = 0.
25 Ω @ VGS = -2.
5 V.
• Low gate charge (3.
3 nC typical).
• High performance trench technology for extremely low RDS(ON).
• Compact industry standard SC70-6 surface mount package.
S D D SC70-6 G D D 1 6 2 5 3 4 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1) (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) Package Outlines and Ordering Information Device Marking Device Reel Size .
12 FDG312P 7’’ Ratings -20 ±8 -1.
2 -6 0.
75 0.
55 0.
48 -55 to +150 260 Tape Width 8mm Units V V A W °C °C/W Quantity 3000 units ©1999 Semiconductor Components Industries, LLC.
October-2017, Rev.
3 Publication Order Number: FDG312P/D FDG312P DMOS Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -20 V ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = -250 µA, Referenced to 25°C VDS = -16 V, VGS = 0 V -19 mV/°C -1 µA IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA On Charact...


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