FDMC8878 N-Channel Power Trench® MOSFET
February 2007
FDMC8878 N-Channel Power Trench® MOSFET
30V, 16.5A, 14mΩ Features General Description
Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.6A Max rDS(on) = 17mΩ at VGS = 4.5V, ID = 8.7A Low Profile - 1mm max in Power 33 RoHS Compliant
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This N-Channel MOSFET is a rugged gate version of Fairchild Semicondu...
