Shielded Gate MOSFET Technology
Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode tec...
FDMS86255 PDF File
