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FDP085N10A

INCHANGE
Part Number FDP085N10A
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.5mΩ ·Enhancement mode ·Fast Sw...
Datasheet PDF File FDP085N10A PDF File

FDP085N10A
FDP085N10A

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.
5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC to DC converters ·synchronous rectification for telecommunication PSU ·AC motor drives and uninterruptible power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 96 IDM Drain Current-Single Pulsed 384 PD Total Dissipation @TC=25℃ 188 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNI...


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