MOSFET. FDP085N10A Datasheet

FDP085N10A Datasheet PDF

Part FDP085N10A
Description N-Channel PowerTrench MOSFET
Feature N-Channel Power Trench Mosfet Chip 100V, 96A, 8.5mΩ1 Part FDP085N10A V(BR)DSS 100V IDn 96A RDS(o.
Manufacture micross
Datasheet
Download FDP085N10A Datasheet

N-Channel Power Trench Mosfet Chip 100V, 96A, 8.5mΩ1 Part F FDP085N10A Datasheet
FDP085N10A — N-Channel PowerTrench® MOSFET FDP085N10A N-Cha FDP085N10A Datasheet
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-sou FDP085N10A Datasheet




FDP085N10A
N-Channel Power Trench Mosfet Chip
100V, 96A, 8.5mΩ1
Part
FDP085N10A
V(BR)DSS
100V
IDn
96A
RDS(on) Max
8.5mΩ1
Die Size
2.4 x 4.4 mm2
See page 2 for ordering part numbers & supply formats
FDP085N10A
Applications
Features
High density AC / DC Converters
Motor drives & Micro Inverters
High Power & Current Handling Capability
Low RDS (on) per mm2
Maximum Ratings
Low Gate Charge, Fast Switching
Symbol
VDSS
VGSS
ID
IDM
TJ, TSTG
EAS
dv/dt
Parameter
Drain to Source Voltage
Drain Current2
Gate to Source Voltage
Continuous (TC = 25°C)
Drain Current3
Continuous (TC = 100°C)
Pulsed
Operation Junction & Storage Temperature
Single Pulsed Avalanche
Energy4
Peak Diode Recovery dv/dt4
L = 3mH, IAS = 13.4A, RG=25Ω
Starting TJ =25°C
ISD ≤ 96A, di/dt ≤ 200A/µs, VDD ≤ BVDSS
Starting TJ=25°C
Ratings
100
±20
96
68
384
-55 to 175
269
6
Units
V
V
A
°C
mJ
V/ns
Static Characteristics, TJ = 25° unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
Drain to Source Breakdown Voltage
Gate threshold Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current @ 150°C
Gate to Body Leakage Current
Static Drain to Source On Resistance1
ID = 250µA, VGS = 0V
VGS = VDS, ID =250µA
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V
VGS = ±20V , VDS = 0V
VGS = 10V, ID = 96A
100
2.0
-
-
-
-
Notes:
1. Defined by chip design, not subject to 100% production test at wafer level
2. Performance will vary based on assembly technique and substrate choice
3. Repetitive Rating: Pulse width limited by maximum junction temperature
- -V
- 4.0 V
- 1 µA
- 500
- ±100 nA
7.35 8.5 mΩ
Further Information - Contact your Micross sales office or email your enquiry to baredie@micross.com
©2014 Fairchild Semiconductor Corporation & Micross Components



FDP085N10A
Dynamic Characteristics4, TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
gFS
ESR
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgs2
Qgd
Forward Transconductance
Equivalent Series Resistance (G-S)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 10V, ID = 96A
f = 1MHz
VDS =50V, VGS = 0V
f = 1MHz
VDS =50V, VGS = 0V
VDS =50V, ID = 96A
VGS = 10V5
-
-
-
-
-
-
-
-
-
-
Typ
72
0.97
2025
468
20
752
31
9.7
5.0
7.5
Max
-
-
2695
620
-
-
40
-
-
-
Units
S
pF
pF
pF
pF
nC
nC
nC
nC
Switching Characteristics4, TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
td(on) Turn-On Delay Time
- 18 46 ns
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VDD = 50V, ID = 96A
VGS = 10V RGEN = 4.7Ω5
- 22 54 ns
- 29 68 ns
tf Turn-Off Fall Time
- 8 26 ns
Drain-Source Diode Characteristics4, TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
IS
Maximum Continuous Drain to Source Diode Forward Current
- - 96
ISM
Maximum Pulsed Drain to Source Diode Forward Current
- - 384
VSD Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 96A
- - 1.3
trr
Reverse Recovery Time
VDD=50V, VGS =0V, ISD =96A
-
59
-
Qrr Reverse Recovery Charge
dIF/dt = 100A/μs
- 80 -
Notes:
4. Characterised by design & tested at component level, not subject to production test at wafer level
5. Essentially independent of Operating Temperature Typical Characteristics
A
A
V
ns
nC
Ordering Guide
Part Number
Format
Detail / Drawing
FDP085N10AMW
Un-sawn wafer, electrical rejects inked
Page 3
FDP085N10AMWF
Sawn wafer on film-frame
Page 4
FDP085N10AMD
Singulated die / chips in waffle pack
Page 4
Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request
Further Information - Contact your Micross sales office or email your enquiry to baredie@micross.com
©2014 Fairchild Semiconductor Corporation & Micross Components




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