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FDS6681Z MOSFET Datasheet PDF

30V P-Channel MOSFET

30V P-Channel MOSFET

 

 

 

Part Number FDS6681Z
Description 30V P-Channel MOSFET
Feature MOSFET – P-Channel, POWERTRENCH) 30 V FDS6681Z General Description This P Channel MOSFET is produced using onsem i’s advanced PowerTrench process that has been especially tailored to minimi ze the on−state resistance.
This devi ce is well suited for Power Management and load switching applications common in Notebook Computers and Portable Batt ery Packs.
Features
• –20 A, –30 V ♦ RDS(ON) = 4.
6 mΩ @ VGS = –10 V ♦ RDS(ON) = 6.
5 mΩ @ VGS = –4.
5 V
• Extended VGSS Range (–25 V) for Battery Applications
• HBM ESD Prote ction Level of 8 kV Typical (Note 3) High Performance Trench Technology fo r Extre .
Manufacture ON Semiconductor
Datasheet
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Part Number FDS6681Z
Description MOSFET
Feature FDS6681Z Aug 2015 FDS6681Z 30 Volt P-C hannel PowerTrench® MOSFET General De scription This P-Channel MOSFET is prod uced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize t he on-state resistance.
This device is well suited for Power Management and lo ad switching applications common in Not ebook Computers and Portable Battery Pa cks.
Features
• –20 A, –30 V.
RD S(ON) = 4.
6 mΩ @ VGS = –10 V RDS(ON ) = 6.
5 mΩ @ VGS = –4.
5 V
• Exten ded VGSS range (–25V) for battery app lications
• HBM ESD protection level of 8kV typical (note 3)
• High perfor m .
Manufacture Fairchild Semiconductor
Datasheet
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