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FDS6681Z

ON Semiconductor
Part Number FDS6681Z
Manufacturer ON Semiconductor
Description 30V P-Channel MOSFET
Published Jan 24, 2023
Detailed Description MOSFET – P-Channel, POWERTRENCH) 30 V FDS6681Z General Description This P−Channel MOSFET is produced using onsemi’s ad...
Datasheet PDF File FDS6681Z PDF File

FDS6681Z
FDS6681Z

Overview
MOSFET – P-Channel, POWERTRENCH) 30 V FDS6681Z General Description This P−Channel MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on−state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features • –20 A, –30 V ♦ RDS(ON) = 4.
6 mΩ @ VGS = –10 V ♦ RDS(ON) = 6.
5 mΩ @ VGS = –4.
5 V • Extended VGSS Range (–25 V) for Battery Applications • HBM ESD Protection Level of 8 kV Typical (Note 3) • High Performance Trench Technology for Extremely Low RDS(ON) • High Power and Current Handling Capability • Termination is Lead−free and RoHS Compliant • This is a Pb−Free and Halide Free Device ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−Source Voltage −30 V VGSS Gate−Source Voltage ±25 V ID Drain Current Continuous (Note 1a) −20 A Pulsed −105 PD Power Dissipation f...


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