FDT86102LZ N-Channel PowerTrench® MOSFET
November 2010
FDT86102LZ
N-Channel PowerTrench® MOSFET
100 V, 6.6 A, 28 mΩ Features
Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A HBM ESD protection level > 6 kV typical (Note 4)
Very low Qg and Qgd compared to competing trench technologies
Fast switching spee...
